6
RF Device Data
Freescale Semiconductor
MRFE6S9045NR1
TYPICAL CHARACTERISTICS
960
15
23
800
?70
50
IRL
21 30Gps
ALT1
ACPR
?30
D
22 40
19
18
?40
17
?50
16
?60
940
920
900
880
860
840
820
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
?15
?10
η
D
, DRAIN
EFFICIENCY (%)
0
?5
ηD
960
16
23
800
?70
34
20 ?30Pout
= 10 W (Avg.) I
DQ
= 350 mA
N?CDMA IS?95 Pilot Sync, Paging
IRL
Gps
ALT1
ACPR
22 32
21 30
19 ?40Traffic Codes 8 Through 13
18 ?50
17 ?60
940
920
900
880
860
840
820
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
?20
?15
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance @ Pout
= 10 Watts Avg.
η
D
, DRAIN
EFFICIENCY (%)
?10
0
?5
f, FREQUENCY (MHz)
Figure 4. Single-Carrier N-CDMA Broadband Performance @ Pout
= 20 Watts Avg.
Figure 5. Two-Tone Power Gain versus
Output Power
200
17
24
IDQ
= 525 mA
Pout, OUTPUT POWER (WATTS) PEP
22
20
10
G
ps
, POWER GAIN (dB)
23
21
350 mA
1
VDD
= 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two?Tone Measurements
175 mA
Figure 6. Third Order Intermodulation Distortion
versus Output Power
?30
?10
1
Pout, OUTPUT POWER (WATTS) PEP
10
?20
200
?60
?40
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
?50
VDD
= 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two?Tone Measurements
20 ?20VDD
= 28 Vdc, P
out
= 20 W (Avg.)
IDQ
= 350 mA, N?CDMA IS?95 Pilot
Sync, Paging, Traffic Codes 8
η
Through 13
262.5 mA
437.5 mA
19
18
100
IDQ
= 175 mA
350 mA
525 mA
262.5 mA
437.5 mA
100
VDD
= 28 Vdc
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MRFE6S9046NR1
MOSFET RF N-CH 45W TO-270-4
MRFE6S9060NR1
MOSFET RF N-CH 14W TO270-2
MRFE6S9125NR1
MOSFET RF N-CH 27W TO-270-4
MRFE6S9130HSR5
MOSFET RF N-CH 27W NI-780S
MRFE6S9135HSR5
MOSFET RF N-CH 39W 28V NI-880S
MRFE6S9160HSR5
MOSFET RF N-CH 35W 28V NI-780S
MRFE6S9200HSR5
MOSFET RF N-CH 58W 28V NI-880S
MRFE6S9201HSR5
MOSFET RF N-CH 40W 28V NI-780S
相关代理商/技术参数
MRFE6S9045NR1-CUT TAPE
制造商:Freescale 功能描述:MRFE6S9045 Series 880 MHz 10 W 28 V N-Channel RF Power MOSFET
MRFE6S9046GNR1
功能描述:射频MOSFET电源晶体管 HV6E 45W GSM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9046NR1
功能描述:射频MOSFET电源晶体管 HV6E 45W GSM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9060GNR1
功能描述:射频MOSFET电源晶体管 HV6E 60W TO 270-2GN FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9060NR1
功能描述:射频MOSFET电源晶体管 HV6E 60W TO270-2N FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9060NR1-CUT TAPE
制造商:Freescale 功能描述:MRFE6S9060 Series 880 MHz 14 W 28 V N-Channel RF Power MOSFET
MRFE6S9125NBR1
功能描述:射频MOSFET电源晶体管 HV6E 125W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9125NR1
功能描述:射频MOSFET电源晶体管 HV6E 125W
RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray